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Figure 29-6 A donor atom of arsenic with five valence electrons replaces a silicon atom and provides an unbound electron in the silicon crystal (a) An acceptor atom of gallium with three valence electrons creates a hole in the crystal (b)

[2422]

Figure 29-7 In an n-type semiconductor (a), donor energy levels place electrons in the conduction band In a p-type semiconductor (b), acceptor energy levels result in holes in the valence band



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Thermistors The electric conductivity of intrinsic and extrinsic semiconductors is sensitive to both temperature and light Unlike metals in which conductivity is reduced when the temperature rises, an increase in temperature of a semiconductor allows more electrons to reach the conduction band, and conductivity increases and resistance decreases One semiconductor device, the thermistor, is designed so that its resistance depends very strongly on temperature The thermistor can be used as a sensitive thermometer and to compensate for temperature variations of other components in an electric circuit Thermistors also can be used to detect radio waves, infrared radiation, and other forms of radiation





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The Conductivity of Doped Silicon Silicon is doped with arsenic so that one in every million silicon atoms is replaced by an arsenic atom Each arsenic atom donates one electron to the conduction band Arsenic Donor a What is the density of free electrons b By what ratio is this density greater than that of intrinsic silicon with 145 1010 free e /cm3 c Is conduction mainly by the electrons of the silicon or Si Si Si the arsenic

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Identify the knowns and unknowns Known:

1 As atom/106 Si atoms 1 free e /As atom 499 1022 Si atoms/cm3 145 1010 free e /cm3 in intrinsic Si

Substitute free e /As atom 1 free e /1 As atom, As atoms/Si atoms 1 As atom/1 106 Si atoms, Si atoms/cm3 499 1022 Si atoms/cm3

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One version of the transmatch is shown in Fig 24-5 This circuit is basically a combination of the split-capacitor network and an output tuning capacitor (C 2) For the HF bands, the capacitors are on the order of 150 pF per section for C1, and 250 pF for C2 The collar inductor should be 28 H The transmatch is essentially a coaxto-coax impedance matcher, and is used to trim the mismatch from a line before it affects the transmitter

) ( ( (

Which of the following code fragments, inserted independently at line 10, will probably run most (or all) of the main thread s run() method invocation before running most of the t1 thread s run() method invocation (Choose all that apply) A t1setPriority(1); new Mosey()run(); t1start(); B t1setPriority(9); new Mosey()run(); t1start(); C t1setPriority(1); t1start(); new Mosey()run(); D t1setPriority(8); t1start(); new Mosey()run(); 13 Given:

344 106 As-donated electron per instrinsic Si electron c Because there are over 3 million arsenic-donated electrons for every intrinsic electron, conduction is mainly by the arsenic-donated electrons

Are the units correct Using dimensional analysis confirms the correct units Is the magnitude realistic The ratio is large enough so that intrinsic electrons make almost no contribution to conductivity

11 If you wanted to have 1 104 as many electrons from arsenic doping as thermally free electrons in silicon at room temperature, how many arsenic atoms should there be per silicon atom 12 If you wanted to have 5 103 as many electrons from arsenic doping as thermally free electrons in the germanium semiconductor described in problem 6, how many arsenic atoms should there be per germanium atom 13 Germanium at 4000 K, has 113 1015 thermally liberated carriers/cm3 If it is doped with 1 As atom per 1 million Ge atoms, what is the ratio of doped carriers to thermal carriers 14 Silicon at 4000 K, has 454 1012 thermally liberated carriers/cm3 If it is doped with 1 As atom per 1 million Si, what is the ratio of doped carriers to thermal carriers 15 Based on problem 14, draw a conclusion about the behavior of germanium devices as compared to silicon devices at temperatures in excess of the boiling point of water

37 38 39 40 41 42 boolean b = false; int i = 7; double d = 123; float f = 456f; // insert code here

Figure 29-8 Photographers use light meters to measure the intensity of incident light on an object

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