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Figure 35-7: Using both the RadioButton and RadioButtonList controls When users first pull up the page, they only see the two sets of radio buttons. When they make a selection, one of the two available groups of radio buttons shows up in the browser. Then, when the user selects a browser version from one of the RadioButtonList controls, text displays at the bottom of the page and informs them of their choice. Like the CheckBox controls, the attribute TextAlign dictates what side of the radio button the text displayed. The default setting is Right, and it means that the text is displayed to the right of the radio button. A setting of Left means that the text displays on the left side of the radio button. Also, like the CheckBox controls, you can customize the layout of the RadioButton controls using RepeatDirection, RepeatColumns, and RepeatLayout.

The sounding pulses thus should have an ACF that is a good approximation of a delta function; in other words, a high autocorrelation peak RpTX (0), as well as low ACF sidelobes. The ratio between the height of the autocorrelation peak and the largest sidelobe is called the POP ratio and is an important quantity for characterization of correlative sounding signals. Figure 8.4 shows an example of an ACF, and the delay resolution that can be achieved with such a signal [de Weck 1992].

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44 The classic Graetzel -type cell uses TiO2 as an n-type semiconductor and a suitable dye and electrolyte, but also other metal oxides are discussed to serve as the charge carrier81 In general, the oxide has to be in a highly crystalline state in order to ful ll the requirements for a semiconductor with suf cient conductivity and chemical stability In short, the classic Graetzel-type DSSC works as follows (see the review of L M Peter81 for an overview): Photocurrents in the DSSC are created when light is absorbed by the sensitizer dye, leading to electron injection into the conduction band of TiO2 The electrons move through the TiO2 network by a random walk process until they reach the electrode The dye is regenerated by electron transfer from iodide before it has time to undergo bleaching.

The final type of damage that p-MOS transistors suffer is called negative bias temperature instability (NBTI) This damage can be seen on both n-MOS and pMOS devices, but is far more prevalent in p-MOS transistors, and is usually tested only on these devices It has been shown that NBTI does have hot-carrier repercussions Consequently, this damage mechanism is discussed here First we give a brief introduction to NBTI followed by a discussion of the hot-carrier effect on NBTI NBTI is a phenomenon that occurs at high temperatures, usually over 100 C under the influence of high negative gate fields (see Ref 45 and references cited therein) The effect manifests itself in an increase in the n-channel threshold and a decrease in the subthreshold gradient, indicating Nit and hole Not creation.

Many different mechanisms are thought to be responsible, including oxygen vacancy formation, strained bond reaction, hole or electron tunneling in the oxide, and 46 electrochemical reactions Although this is a general reliability concern, the interest here is what occurs when simultaneous high drain and high gate voltage stresses are applied to the transistor This effect is called hot carrier NBTI, or HC-NBTI 45 The effect of applying voltages to the gate and drain is to accelerate the phenomenon by a full order of magnitude This degradation increases with increasing temperature in contrast to the other mechanisms that have been discussed Although this effect is seldom considered because simultaneous high gate and high drain voltages do not occur for very long in a clock cycle, it is important for nitrided gate oxides discussed in Section 67, since these oxides show increased susceptibility to NBTI and HC-NBTI.

The I3- ions produced in the regeneration step diffuse to the cathode (usually covered with platinum), where they are reduced to iodide ions completing the regenerative cycle Alternative concepts use mesoporous TiO2 in combination with conducting polymers Up until some years ago, the TiO2 used in DSSCs was mainly of coarse-grain morphology, ie, with particle sizes on the scale of >100 nm Although the performance of DSSCs is regarded as being dependent on various parameters (eg, electrolyte and dye), it is generally assumed that modi cation of the semiconductor morphology still has the potential to lead to a signi cant enhancement of the ef ciency.

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