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I don t mind having to travel occasionally with work. For example I had to travel with the Marketing Director a couple of times a year and spent a couple of nights each time in Manchester and Edinburgh. But am I right to think that this job will primarily be based in this office



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SolidWorks enables you to work with both tables that are highly specialized for particular uses, and General Tables, which are available for any type of tabulated data. The most frequently used types are BOMs, Hole Tables, and Revision Tables. Design Tables that drive part and assembly configurations can also be placed on a 2D drawing, but in these cases, some formatting is usually necessary to make the Design Table presentable and the information on it easy to read. Other types of tables, such as Gauge Tables and Bend Tables, and Weldment Cut Lists are specialized for sheet metal and weldment parts, respectively, and are discussed in chapters that cover those topics.

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Of course, any time you are presented with a choice, there are options you must weigh. Seldom is there a perfect fit. The following lists explain the advantages of each naming method to further help you understand how each differs from the other. Advantages of separate namespaces include the following:

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Single-electron transfer (SET), quantum effect devices, 253-254 Single-ended mixer design, CMOS technology, radiofrequency (RF) circuit design, 509-513 Single-ended power amplifiers, CMOS technology, 536-537 Single-gate silicon nitride memory cells, structural characteristics, 443-444 Single-stage differential low-noise amplifier, highly integrated transceivers, 505-508 "sin(x)x" effect, analog-to-digital (A/D) conversion, 654 Slow hole traps, hot-carrier effect (HCE), low gate voltage stresses, 287 Small-signal conductance, drain current, strong inversion approximation, first-order MOSFET models, 81-82 Smart-Cut process, silicon-on-insulator (SOI) devices, UNIBOND material, 228-230 Smart power circuits, silicon-on-insulator (SO) devices, 259-261 SMI process, self-adjusted transistor structures device results, 59-60 double-poly transistor, 54-55 SNOS device, structural characteristics of, 431 Soft errors: DRAM (dynamic random access memory) circuits, 344-346 alpha particles, 344-345 cosmic rays, 345-346 SRAM (static random access memory) circuits, operation principle, 365-367 alpha particles, 365-366 cosmic rays, 366-367 vs. DRAM, 367 SOI on active substrate (SOIAS), digital applications, low voltage/low power considerations, 585 Solid-phase epitaxy and regrowth (SPEAR), silicon-on-sapphire (SOS) material, 223 SONOS device, structural characteristics of, 430-431 Source capacitance: floating-gate memory arrays, NAND cell, 414-417 SOI MOSFET, 230 Source-coupled logic (SCL), CMOS digital switching, folded source-coupled logic (FSCL), 488-489 Source current, MOSFET parasitic effects, hot carriers, 111-112 Source-drain resistance (RsD), high-speed digital applications:

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1. Brinker, C. J.; Scherer, G. W. 1990. Sol-Gel Science. Academic Press, Boston, MA. 2. Fukushima, J.; Kodaira, K.; Matsushita, T. 1984. Preparation of ferroelectric PZT lms by thermal decomposition of organometallic compounds. J. Mat. Sci. 19:595 598. 3. Budd, K. D.; Dey, S. K.; Payne, D. A. 1985. Sol-gel processing of PbTiO3, PbZrO3, PZT, and PLZT thin lms. Brit. Ceram. Soc. Proc. 36:107 121. 4. Dey, S. K.; Budd, K. D.; Payne, D. A. 1988. Thin- lm ferroelectrics of PZT by sol-gel processing. IEEE Trans. UFFC. 35:80 81. 5. Schneller, T.; Waser, R. 2002. Chemical solution deposition of ferroelectric thin lms state of the art and recent trends. Ferro. 267:293 301. 6. Waser, R.; Schneller, T.; Hoffmann-Eifert, S.; Ehrhart, P. 2001. Advanced chemical deposition techniques from research to production. Int. Ferro. 36:3 20. 7. Waser, R.; Schneller, T.; Ehrhart, P.; Hoffmann-Eifert, P. 2001. Chemical deposition methods for ferroelectric thin lms. Ferro. 259(1 4):205 214. 8. Schwartz, R. W.; Schneller, T.; Waser, R. 2004. Chemical solution deposition of electronic oxide thin lms. C R Chemie 7:433 461. 9. Schwartz, R. W. 1997. Chemical solution deposition of perovskite thin lms. Chem. Mat. 9:2325 2340. 10. Tuttle, B. A.; Schwartz, R. W. 1996. Solution deposition of ferroelectric thin lms. Mat. Res. Bull. 21:49 54. 11. Lakeman, C. D. E.; Payne, D. A. 1994. Sol-gel processing of electrical and magnetic ceramics. Chem. Phys. Mat. 38:305 324. 12. Haertling, G. H. 1992. Current status of thin/thick lm ferroelectrics. Ceram. Trans. 25:1 18.

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