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Define an estimator T by the property that it minimizes an expression of the form (11.4) Here, p is a given symmetric function with a unique minimum at 0, S is the MAD (median absolute deviation from the median), and c is a so-called tuning constant. If p is convex and its derivative 1c, = p is bounded, then T has breakdown point 0.5; see Section 3 . 2 . For nonconvex p ( redescending estimates ), the situation is more complicated. Assume that p increases monotonely toward both sides. If p is unbounded, and if some weak additional regularity conditions are satisfied, the breakdown point still is 0.5. If p is bounded, the breakdown point is strictly less than 0.5, and it depends not only on the shape of 11, and the tuning constant c, but also on the sample configuration. See Huber (1984) for details and explicit determination of the breakdown points.

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3 Cu, In, Ga, and Se are codeposited from the solution at room temperature in a three-electrode cell con guration, where the reference electrode is a platinum pseudo-reference, the counter electrode is platinum gauze, and the working electrode is the substrate The substrates typically used are glass, DC-sputtered with about 1 m of Mo In all experiments, the applied potential is 10 V versus the Pt pseudo-reference electrode The corresponding current density range for the deposition is 5 to 7 mA/cm2 Good morphology of the precursor lms is essential to obtain highef ciency devices Figures 76a and 76b show scanning electron microscope (SEM) morphology of the surface and cross section of a lm with acceptable morphology As the micrograph reveals, the as-deposited precursor lms are densely packed with descent particle size.

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In a thick-film SOI device (Fig 55b), the silicon film thickness is larger than twice the value of Xdmax In such a case, there is no interaction between the depletion zones arising from the front and the back interfaces, and there exists a piece of neutral silicon beneath the front depletion zone Such a device is called partially depleted (PD) If this neutral piece of silicon, called "body," is connected to ground by a "body contact" or "body tie," the characteristics of the device will be exactly those of a bulk device.

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If, however, the body is left electrically floating, the device will basically behave as a bulk device, but with the notable exception of two parasitic effects-the first one is called the "kink effect" (a kink appears in the output characteristics of the device), and the second one is the presence of a parasitic, openbase, bipolar transistor between the source and the drain In a thin-film SOI device (Fig 55c), Ihe silicon film thickness is smaller than Xdmax In this case, the silicon film is fully depleted at threshold, irrespective of the bias applied to the back gate (with the exception of the possible presence of thin accumulation or inversion layers at the back interface, if a large negative or positive bias is applied to the back gate, respective ely) Such a device is called fully depleted (FD).

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