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Aluminum (affinity between tool and workpiece) (Contd)

Table 210 (Contd) Tool material Suitable Ceramic (Al2O3) Cast iron, hard steel (less cratering than tungsten carbide), molybdenum TZM alloys, tungsten and Rene 41, 4340 steel (no chemical interaction) Work material Unsuitable Aluminium, titanium alloy (high affinity for oxygen causing rapid tool wear), B-120 VCA titanium alloy and D6 AC steel (slight chemical interaction Molybdenum TZM alloys, 4340 steel, B-120 VCA titanium alloy (slight chemical interaction) and aluminium silicon alloy Carbon steel (chemical incompatibility) Iron, ferrous materials below 42 Rc and titanium super alloys (react chemically)



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A di erent approach to the transistor is the eld e ect transistor (FET). The FET comes in both npn and pnp avors, like the BJT. Let s look at just the npn FET (Fig. 12-18).

Cermets (TiC) Silicon Nitride (Si3N4)

Fig. 12-17.

Hard cast iron and hard steel Tungsten, Rene 41, D6 AC steel (no chemical interaction), cast iron, nickelbased alloys and hard steel

Nickel-based super alloys and grey cast iron Nickel-based alloys (Inconel, Waspoloy and Hastelloy), cast iron and steels, low to medium alloy steels, heat treated alloy steel, die steel, hard iron (Rc between 45 and 65) and hard ferrous materials

Fig. 12-18.

Whisker Reinforced Ceramic (WG-300)





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Diamond (Single Non-ferrous metals, aluminium, Babbitt, crystal, Polycrystalline, white metal, brass, copper, bronze, gold, CVD coated) silver, platinum, non-metallic materials, epoxies and fibreglass-filled resins Cubic Boron Nitride (only available in polycrystalline form) High-speed steels, tool steels, die steels, bearing steel, alloys steels, casehardened steels, white cast irons and alloy cast irons (hardness values considered are in the range of HRC 50-70)

since it results from an infinitesimal gauge transformation in g; acting on both A and cp'. The ghost-mass matrix is therefore

In this transistor, the two ends are the source (S), which is where electrons come in from ground, and the drain (D) where the electrons go out. The controlling area is the gate (G). With no charge at the gate, there is a small depletion layer between the N and P semiconductors. Current is still free to ow from the source to the drain. If you apply a negative charge to the gate this depletion layer grows, pinching o the ow of electrons. The more gate charge, the more pinched, until the resistance between the source and drain is large enough that no e ective current remains.

Plain-carbon steels, titanium, nickel and cobalt-based alloy (strong chemical affinity)

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The future for machining as a manufacturing process remains bright Machining has all the attributes for making almost any product The cutting tools needed for this are discussed in this chapter and they have exhibited a good performance and have met the exacting requirements of precision engineering If single-crystal CBN tools could be developed, they could be used successfully

A MOSFET is a variation on the FET. The MOS stands for metal oxide semiconductor. The metal oxide is a glass-like layer that is an excellent insulator. It is used to completely insulate the gate from the rest of the transistor (Fig. 12-19). In this example we look at an enhancement mode MOSFET. The source and drain are both n-type semiconductors embedded in a p-type substrate. They are isolated from each other, so no current can ow. The gate is a metal plate separated from the substrate by a thin oxide insulator. When the gate is made positive relative to the source, the holes in the p-type substrate are pushed away from the gate (meaning the lattice electrons are attracted to it). This opens up a conducting channel, allowing current to ow from the source to the drain. A depletion mode MOSFET is like the FET, where the source and drain are attached to a common n-type channel. The electric eld at the gate pinches the channel closed. The gate of a MOSFET is almost perfectly insulated from the conduction channel, so there is no noticeable current leakage. The gate acts like a capacitor. Where the other transistors are analog switches, ampli ers even, the MOSFET has a limited analog range. It is more useful as a digital switch,

for ultra-precision turning Likewise, if CBN coatings, like diamond coatings, could be deposited on carbide substrates, then the applications for machining of steel would be useful This would make the expectations in the relevance tree in Figure 21 more meaningful

Fig. 12-19.

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