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In the reactive PVD method, carbides, nitrides, oxides, carbonitrides, and many other types of compounds are deposited by introducing a reactive gas (simple hydrocarbons such as CH4, C2H4; nitrogen; oxygen; and other gases) into the physical vapour stream Reactions between the gas and physical vapour can occur at the source surface, in transit, or at the substrate surface, as well as on the chamber walls and on other surfaces In most processes, reactions at the vapor source are minimal owing to the nature of the process and/or the requirements of the process designer In the vacuum arc evaporation technique, surface reactions often take place at the source These reactions do not significantly affect the vaporization rates because most of the vapor release occurs from beneath the source surface In electron beam evaporation, the maximum operating pressure at the source is too low at typical evaporation rates for significant reactions to occur For reactive planar magnetron sputtering, cathode vaporization rates are often reduced by a factor of 10 or more at a given power input when oxide, nitride, or carbide layers form on the sputtered surface To avoid such a reduction in rates, formation of reacted surface layers is often inhibited by enclosing the cathode in a housing having a vapour emission slot and by simultaneously directing reactive gases towards the substrates Either the reactive gas flow or the cathode power level must then be controlled to maintain a proper balance of metal and gas reactants arriving at the substrates to achieve the desired film composition, while at the same time maintaining a sufficiently low concentration of reactive gas at the cathode to prevent the formation of rate-limiting reaction films Automatic process control is required to achieve the continuous monitoring and short response time necessary to maintain the balance between metal and gas reactants at the substrates The use of reactive PVD hard coatings, especially titanium nitride (TiN), to improve the performance of cutting tools has increased at an exceptionally high rate since 1980 Titanium nitride is a refractory material that has hardness greater than HRC 80, and is approximately three times harder than the typical high-speed tool steels A TiN coating provides resistance to chemical deterioration because it is a stable (almost inert) material It also prevents chip welding in cutting tools owing to the antigalling properties of the coating Titanium nitride has a lower coefficient of friction than do hard chromium coatings, thus improving chip flow and reducing friction between the tool and the work piece The PVD process does not cause any heat-related damage to the cutting tool edge, so the strength of the coated tool is nearly equal to that of the substrate PVD can be applied only to limited substrate shapes; for example, it is impossible to coat the inner surface of a hole using the PVD technique The coating is finer grained, smoother, and more lubricious Generally, PVD coatings are better suited for precision HSS, HSS-CO, brazed WC, or solid WC tools In fact, PVD is the only viable method for coating brazed tools because the CVD method uses temperatures that melt the brazed joint and soften the steel shanks Brazed WC tools should be stress relieved before being subjected to PVD coating to minimize tool body distortion The steel shank of a rotary tool with a brazed solid WC head is sometimes finish ground between centres after coating to maintain its roundness to within 001 mm PVD coatings effectively conform to the sharp edges of finishing tooling and are generally smoother than CVD coatings, which build up on sharp corners PVD.



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coatings are preferred for positive rake and grooved inserts because they produce compressive stresses at the surface Thin PVD coatings are popular for use in milling applications because they provide a greater shock resistance The coating/substrate compatibility is improved by applying one or more intermediate layers between the surface PVD TiN/TiCN/TiN coating and the substrate to balance (35 m) chemical bonding and thermal expansion coefficients, resulting in a multi-layered coating system which optimizes the tool performance by making it resistant to several kinds of wear Multi-layer coatings may be produced by combining the CVD and PVD 5 m methods; in such cases, the CVD process improves the adhesion between the substrate Fig 214: Microstructure of a Kennametal grade KT315 and the first coating layer, while the showing the coated layers [10] subsequent PVD coating layers provide a fine-grained microstructure with a better wear resistance and toughness Multi-layer coatings are very commonly used in turning and boring operations because they provide the best combination of properties Figure 214 shows PVD coated layers on a KT 315 grade carbide insert [20] The ultimate in coating materials is diamond, which is the hardest known material Diamond is not, however, suitable for most steel-cutting operations, as it breaks down chemically at high cuttingedge temperatures Its nearest equivalent for steel machining is ultra-hard cubic boron nitride, which has been produced as similarly bonded, carbide-backed layers, as well as solid indexable inserts Intensive research is being aimed at the introduction of CVD and/or PVD coating of cubic boron nitride, and it is likely that a commercial product could emerge





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2. Hopefully you remember some of it! Free electrons, holes, majority and minority carriers, dopants, depletion zones. There is a lot of fancy wordsmithing needed to talk about semiconductors. Even more important than the words, which you learn with repeated use, are the concepts and how electrons behave inside the semiconductor lattice. 3. Doped semiconductors comes in two avors, n-type and p-type. An n-type semiconductor has an excess of free electrons. A p-type semiconductor has the reverse condition, an excess of electron-binding holes in the lattice. Both free electrons and holes are charge carriers, and can move freely through the semiconductor. 4. The depletion zone is the junction between n-type and p-type semiconductor chips, where the holes and free electrons join into an insulating layer. Which insulates. A forward-biased depletion zone grows smaller until it conducts current. A reverse-biased depletion zone gets bigger and continues to refuse to conduct current. 5. A transistor is a voltage-controlled insulator. It uses a small forward bias across one of its depletion zones (the emitter/base current) to control the larger conductance through the entire transistor (the emitter/ collector current). This acts like an ampli er, taking a small signal on the base and turning it into a large signal at the collector. 6. The answer is in Fig. 12-18. I bet your picture looks just like it.

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